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Doping (semiconductor)
In semiconductor production, doping intentionally introduces impurities into an extremely pure (also referred to as ''intrinsic'') semiconductor for the purpose of modulating its electrical properties. The impurities are dependent upon the type of semiconductor. Lightly and moderately doped semiconductors are referred to as ''extrinsic''. A semiconductor doped to such high levels that it acts more like a conductor than a semiconductor is referred to as ''degenerate''.
In the context of phosphors and scintillators, doping is better known as activation.
==History==
The effects of semiconductor doping were long known empirically in such devices as crystal radio detectors and selenium rectifiers. However, the process was formally first developed by John Robert Woodyard working at Sperry Gyroscope Company during World War II.〔 filed, 1944, granted 1950〕 The demands of his work on radar denied Woodyard the opportunity to pursue research on semiconductor doping. However, after the war ended, his patent proved the grounds of extensive litigation by Sperry Rand. Related work was performed at Bell Labs by Gordon K. Teal and Morgan Sparks.〔Sparks, Morgan and Teal, Gordon K. "Method of Making P-N Junctions in Semiconductor Materials", (Filed June 15, 1950. Issued March 17, 1953)〕
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